High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate
نویسندگان
چکیده
منابع مشابه
Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits.
A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm(2) (260 A/cm(2) per well) were obtained with the stripe width of 5.4 microm and the cavity length of 1.47 mm. A fundamental transverse mode ...
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ژورنال
عنوان ژورنال: IEEE Photonics Technology Letters
سال: 2008
ISSN: 1041-1135
DOI: 10.1109/lpt.2008.2005425